aot2502l/AOB2502L general description product summary v ds i d (at v gs =10v) 106a r ds(on) (at v gs =10v) < 11m? (10.7m?*) applications 100% uis tested 100% rg tested symbol ? synchronous rectification in dc/dc and ac/dc conv erters ? industrial and motor drive applications parameter absolute maximum ratings t a =25c unless otherwise noted maximum units AOB2502L to-263 tape & reel 800 aot2502l to-220 tube 1000 150v n-channel mosfet orderable part number package type form minimum order quantity 150v ? trench power mv mosfet technology ? low r ds(on) ? low gate charge ? optimized for fast-switching applications g d s to-263 d 2 pak top view bottom view d d s g g s aot2502l AOB2502L top view bottom view g g s d d s d d to-220 symbol v ds v gs i dm i as avalanche energy l=0.3mh c e as v ds spike v spike t j , t stg symbol t 10s steady-state steady-state r jc * surface mount package to-263 power dissipation b 111 t c =100c 10s p d 150 180 277 gate-source voltage pulsed drain current c 67 parameter drain-source voltage continuous drain current maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.35 60 0.45 va 20 v maximum units w i d v a 40 a 250 i dsm 14.5 mj 240 18.5 106 maximum junction-to-ambient a c/w r ja 12 50 15 thermal characteristics parameter max t a =70c 5.3 c units junction and storage temperature range -55 to 150 typ p dsm w t a =25c 8.3 power dissipation a t a =25c t a =70c t c =25c t c =100c t c =25c avalanche current c continuous drain current rev.1.0: december 2014 www.aosmd.com page 1 of 6 downloaded from: http:///
symbol min typ max units bv dss 150 v v ds =150v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 3.5 4.3 5.1 v 9.2 11 t j =125c 17.8 21.5 g fs 50 s v sd 0.7 1 v i s 106 a c iss 3010 pf c oss 345 pf c rss 14 pf r g 1 2 3 ? q g (10v) 43 60 nc q gs 18 nc q gd 10 nc t d(on) 19 ns t r 24 ns t d(off) 30 ns t f 8.5 ns turn-off delaytime turn-off fall time v gs =10v, v ds =75v, r l =3.75 , r gen =3 turn-on rise time gate source charge gate drain charge switching parameters turn-on delaytime v ds =0v, v gs =20v maximum body-diode continuous current input capacitance gate-body leakage current diode forward voltage dynamic parameters to-263 reverse transfer capacitance v gs =0v, v ds =75v, f=1mhz v ds =v gs, i d =250 a output capacitance forward transconductance total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 a, vgs=0v r ds(on) static drain-source on-resistance to-220 i s =1a,v gs =0v 8.9 10.7 m? m? v gs =10v, v ds =75v, i d =20a v ds =5v, i d =20a v gs =10v, i d =20a v gs =10v, i d =20a t f 8.5 ns t rr 75 ns q rr 880 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ s turn-off fall time i f =20a, di/dt=500a/ s a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 150 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =150 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: december 2014 www.aosmd.com page 2 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 20 40 60 80 100 3 4 5 6 7 8 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 2 4 6 8 10 12 14 0 5 10 15 20 25 30 r ds(on) (m ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =10v i d =20a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =6v 7v 8v 10v 6.5v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 5 10 15 20 25 4 6 8 10 r ds(on) (m ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev.1.0: december 2014 www.aosmd.com page 3 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 2 4 6 8 10 0 10 20 30 40 50 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 1000 2000 3000 4000 5000 6000 7000 0 25 50 75 100 125 150 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) c oss c rss v ds =75v i d =20a t j(max) =150 c t c =25 c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 i d (amps) v ds (volts) v > or equal to 10v 10 s 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 s 10ms pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 10v figure 9: maximum forward biased safe operating area (note f) r jc =0.45 c/w rev.1.0: december 2014 www.aosmd.com page 4 of 6 downloaded from: http:///
typical electrical and thermal characteristics 0 100 200 300 400 0 25 50 75 100 125 150 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 20 40 60 80 100 120 0 25 50 75 100 125 150 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) t a =25 c 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 15: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 14: single pulse power rating junction-to-am bient (note h) r ja =60 c/w rev.1.0: december 2014 www.aosmd.com page 5 of 6 downloaded from: http:///
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l unclamped inductive switching (uis) test circuit & waveforms vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev.1.0: december 2014 www.aosmd.com page 6 of 6 downloaded from: http:///
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